50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/galGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/gal"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/galGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/gal"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/galGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/gal – fit7alimentos.com.br

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Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/gal

$137.43

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50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/gal">
Description

(@ 1mil DFT) 345 ft²/gal Recommended Curing:

4mm wide Aluminum Tabs for use as the Positive Terminal of Polymer Li-ion Batteries    50pcs/Box

Pressing Rod Diameter: 28mm ± 0

Flow rate depends on drive rpm and tubing size

80% (average hole diameter is ~0

Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell (@ 1mil DFT) 345 ft²/galGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

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