Si Wafer (100), 2" dia x 0.1 mm, 1SP, P type, B doped, R:5-20 ohm.cm - SIBa50D01C1 LiAlO2 0% Decay constant 1000 ns

0% Decay constant    1000 ns Expansion coefficient          54 * 10-6/K Radiation length  1

3" glass lapping plate (front & back) Easy to use and affordable

Core Depth(N): 30 mm

7mm in thickness

This Copper Mesh Foil (11um)  is used as a substrate for coating anode materials in Li-Ion battery research

Si Wafer (100), 2" dia x 0.1 mm, 1SP, P type, B doped, R:5-20 ohm.cm - SIBa50D01C1 LiAlO2 0% Decay constant 1000 nsSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 5 20 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 1 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner