Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAs ): 109 - 1011
$34.44
Description
): 109 - 1011
MeltingPoint 585 oC
ID: 16 mm
Pressure Calibration Kit: Load cell (Unit Kg) + Digital Meter
Vacuum Level: 1
Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAs ): 109 - 1011Specifications Growing Method: CZ Wafer Size: 5x5x0. 45 0. 5 mm Surface Polishing: Two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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