LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14 5" spindle

5" spindle

Chmistry:                    ß-Ga2O3

powder screened to 200 MESH Melting point / Melting range 900 - 975° C  SDS XRD File Package 50 grams units in a glass container

P_(actual on working piece )= F/S_(Cross-section area of the working piece )

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LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14 5" spindleLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5