Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables Polishing: One side polished

Polishing:                             One  side polished

Polish: Both sides optical  polished

and twins If your application is susceptible to the defects

Surface roughness:            RMS or Ra:~ 10 A(By AFM)

the software will provide instructions and warnings for assistance

Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables Polishing: One side polishedSingle crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <110> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single