GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates These prototype pouch cell can

These prototype pouch cell can be used to compare various electrode materials in the same cell structure

It is used to connect the coater for preventing wastewater from flowing into the pump

Surface Roughness: Ra <= 5 Angstrom

working temperature:  250ºC

The prismatic cell tray is shown in Pic

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates These prototype pouch cell canGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers