Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp CdWO4 Click the below to view

Click the below to view video:how to make a coin cell by MTI's machine

0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years  Laminate Strength Nylon/Al      more than 2N/15mm Al/CPP       more than 5N/15mm Heat Seal Strength More than 22

Please click the picture below right to find other size coin cell

Please keep the thermal gradient less than 100oC/cm to avoid cracking

The best crimper: MSK-PN110-S Compact Gas Driven for consistent result Pic1

Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp CdWO4 Click the below to viewSpecifications: Cu coated Si Wafer ( 10x5 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 20 50 nm 10x5x 0. 5 mm thickness Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , RA < 10 nm Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order