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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP Nano Technical Specifications
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP Nano Technical Specifications
$67.85
Description
Technical Specifications
Absorption Intensity
Material made: PP (Polypropylene)
Two standard electrodes (Cathode & Anode) cutting dies are included for immediate use
Other CdWO4
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP Nano Technical SpecificationsGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5mm Polishing: one side polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 65 3. 24)E8 Ohm. cm Mobility: 4700 5630cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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 undoped Semi-Insulated 10x10 x0.5 mm, 1SP Nano Technical Specifications){kind=link}
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