50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes noneGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes none"> 50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes noneGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes none"> 50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes noneGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes none – fit7alimentos.com.br

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Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes none

$224.22

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50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes none">
Description

5 Hygroscopic slightly yes none No no no no Afterglow % at 6ms < 2 - 40 ns - 0

Processing Chart: How to Make Cylinder Cell

The full diamond sintered blade is suitable for low speed cutting ( under 1000 RPM) of crystalline oxides or any brittle crystals

ID:      52 mm

Surface roughness:        Ra < 10 A ( by AFM)

Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods 5 Hygroscopic slightly yes noneGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

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