Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon Ingestion-build-177197 mass loss rate

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IEC 61260:1995 specified tolerance limits without considering the uncertainty of measurement for verification of the specifications while the IEC 61260 series specifies acceptance limits for the observed values and maximum-permitted uncertainty of measurements for laboratories testing conformance to specifications in the standard

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon Ingestion-build-177197 mass loss rate1 Scope This International Standard specifies a secondary ion mass spectrometric method using magnetic sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single crystal, poly crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 1016 atoms cm3 and 2,5 1021 atoms cm3, and to crater