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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP Additive Net Weight: 29
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP Additive Net Weight: 29
$67.85
Description
Net Weight: 29
Dopant: with Tl concentration 1000-3000 ppm
08'' (51 +/- 2 mm) O
pressure and temperature
strong fire resistance
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP Additive Net Weight: 29GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 6mm Polishing: one side polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 1. 1)E8 Ohm. cm Mobility: 5870 6120 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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