Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Thin Film Measurement Travel Distance: 0-200mm Adjustable via

Travel Distance: 0-200mm Adjustable via a digital panel

Thermal conductivity:                                           10-20 w/m

It is suitable for using on the Furnaces (1800C) with SCR & SiC/MoSi2 Heating Elements

Vacuum Strage Box & Oven

Corning Willow Glass Substrates

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Thin Film Measurement Travel Distance: 0-200mm Adjustable viaSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for