Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) This cell is especially suitable

This cell is especially suitable for post-analysis of target electrode to determine the limiting factors of battery efficiency and stability

It is designed for mashing ceramic samples after calcining or sintering to ball milling into fine particle

Thickness: 0

Mullite tube can be used up to 1650 oC in both oxidizing and reduce atmospheres

Laser Mark: none

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) This cell is especially suitableSingle crystal Si Conductivity: N type ( P doped) Resistivity: 0. 1 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01