A, N type, undoped, 2){kind=link}
DISC 2309003005 Item Number:2309003005
US$ 1871.31
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InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Standard thickness 450 ± 25
InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Standard thickness 450 ± 25
$401.93
Description
Standard thickness 450 ± 25 mm
Please baking at 100-120oC under vacuum oven before coating
Hardness: ~7mohns
Bismuth telluride crystal substrate is highly oriented crystal ( not single crystal )
Carrier Concentration 6
InAs (111)A, N type, undoped, 2" in dia x 0.45mm, 1sp ITO Film on Corning 7980 Standard thickness 450 ± 25Growth method LEC Orientation (111)A 0. 5 Deg Orientation Flat SEMI Doping Undoped Conductivity type N type Carrier Concentration <2E16 cm 3 Mobility >23400 cm2 V. S EPD <10000 cm 2 Resistivity: 1. 3x10^ 2 ohm. cm Standard thickness 450 25 mm Standard diameter 2" 0. 4mm Polish one side Related Product Other InAs InSb InP GaAs GaSb Wafer Box Film Coater RTP Furnaces
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