Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Conducting type: Semi-Insulating

Conducting type:                                     Semi-Insulating

Volume Density: 5 ~ 5

9% Size 200mm L x 300mm W x 0

It can prevent wafers from damage and contamination during shipping and storage

MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades

Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Conducting type: Semi-InsulatingNickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 10x10x0. 5mm SiO2 Thichness: 300 nm Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click picture to order ) Related Products Thin