GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z Such professional-grade diamond blades last

Such professional-grade diamond blades last longer and cut faster than ordinary notched-rim or plated-diamond blades

Pocket Size(mil):    L180*W150*D36 Pocket Size(mm):   L4

Single crystal copper metallic substrate

Install exhaust valve (outlet) on the other end of tube flange

Diamond Grinding Plate  (600 mesh) 1 pc EQ-DGP-8PB320 Electro-plated 8" Dia

GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z Such professional-grade diamond blades lastGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 625 mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (0. 74 3. 60) x 10^19 cm^3 Mobility: 59 88 cm^2 V. S EPD: < 5000 cm^2 resistivity: (2. 92 9. 70)x10^ 3 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces