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Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Power: 110V

$34.44

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Description

Power:                 110V

304 stainless steel

Packing:            In vacuum bag

The radius of the arc: ~27

Thickness: 430um+/-15 um

Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Power: 110VSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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