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GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Two standard electrodes (Cathode &
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Two standard electrodes (Cathode &
$485.88
Description
Two standard electrodes (Cathode & Anode) cutting dies are included for immediate use
Specifications Cap Cap with Built-in PTC Thermistor for overcurrent protection
Capable for KSL-1700X-A4 furnace
Resistivity : (0
Density > 3
GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished Max. current +1 mA Two standard electrodes (Cathode &GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow
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