GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2 Diamond on Silicon wafer Thermal Conductivity: 640

Thermal Conductivity:       640

Size: 10X10 x 0

LiCoO2 (LCO) electrode sheet

Made of high quality PTFE materials for minimizing electrolyte corrosion and allowing easy clean ups for repeated use

80% (average hole diameter is ~0

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2 Diamond on Silicon wafer Thermal Conductivity: 640GaP single crystal wafer, Size: 10mm x 10 mm x 0. 35 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) :: < 8A price is for one piece Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier