Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 1SP, R:1-10 ohm.cm P Thickness: 16 micron

Thickness: 16 micron

ball milling

9A Emission sound pressure level without gas ballast

Polishing:  One side polished

Please browse our FH-60 for a large furnace fume hood solution

Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 1SP, R:1-10 ohm.cm P Thickness: 16 micronSingle crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film