US$ 1500.00
Si Wafer (100), 2" dia x 0.5mm, 1SP, P type B doped, R:1-10 ohm.cm Polishers Hardness: 9 ( mohs)
$48.64
Description
Hardness: 9 ( mohs)
Doping: Fe doped
N-type InGaAs(Si-doped)
Grain Size: 3
Diameter: 100 mm +/- 0
Si Wafer (100), 2" dia x 0.5mm, 1SP, P type B doped, R:1-10 ohm.cm Polishers Hardness: 9 ( mohs)Single crystal Si, Conductive type: P type ( B doped) Resistivity: 1 10 ohm. cm Size: 2" diameter x 0. 5mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro Fiber & Dust Free Wiper, 4"x4", 100 pcs bag Wiper yx 2001 Vacuum Pen SMT 150C (NEW) EQ SMT 150C Single Wafer Containers
Shipping Notes
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