Al2O3- Sapphire Wafer, C-plane (0001), 10mmx5mmx0.5mm, 2 sp - ALC100505S2 Al2O3 Dimension/Property:

Dimension/Property:

Crystal Purity: >99

Environmental Protection

Calcine mixed the powder in a high temp furnace under a suitable temperature

Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C

Al2O3- Sapphire Wafer, C-plane (0001), 10mmx5mmx0.5mm, 2 sp - ALC100505S2 Al2O3 Dimension/Property:Features: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 2 side polished Package: Each wafer is packed in 1000 class clean room with