InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US Orientation 411 A cost-effective
$229.43
Description
A cost-effective
Heating Loss
CTE (0-300 degree C): 3
you may use Air Compressor
mm ( close frame )
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US Orientation 411 A cost-effectiveGrowth method LEC Orientation (100) 0. 5 Deg Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500 20 mm Standard diameter 30 mm Polish one side
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