Home
»
»
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001 Heating Zone Length
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001 Heating Zone Length
$63.19
Description
Heating Zone Length
Coulombic efficiency
Fabrication Method: Electrodeposition of Silver on Nickel Foam Substrate
(installed in Aluminum plate) 2 set UP820-04 8" dia x 0
35 mm thickness and 0
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001 Heating Zone LengthGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp Orientation 001 Heating Zone Length){kind=link}
You may also like
peach petal
US$ 24091.00
paris
US$ 34091.00
node 24
US$ 110.47
acrylic keychain 01
US$ 10.00
indivisible
US$ 7679.50
message to the galaxy
US$ 632.98
sparrow
US$ 200.47
i am the dancer
US$ 82.95
*Preorder* God is good Size:Small
US$ 44.95
*Preorder* Jesus Size:3xl
US$ 37.95