Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 which allows the glove box

which allows the glove box to vacuum the chamber to remove moisture and oxygen without expensive inert gas purging

Growing Method:       VGF

Typical Macro defect Density: <5cm^-2

Dimension: 100 x 100 x 3

GF-20A Unit connects two Gas Purifier ( one for de-oxygen and another for de-humidity ) together by stainless steel pipe and two valves and ready to install to any MTI gas mixing system

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm DyScO3 which allows the glove boxSingle crystal: Si, Prime Grade Conductivity: P type B doped Resistivity: 0. 001 0. 005ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma