YSZ Single Crystal Substrate (100) 5x5x1.0mm, 1SP SiC (4H 646 W/m·K for 273 K

646 W/m·K for 273 K

temperature gradient:  1°C/ mm ( one zone heating )

MTI is not responsible for oxiding by cutomer

MSK-160E is driven by electricity and good for use in the glovebox with N2/Ar

Impurities Na (ppm)

YSZ Single Crystal Substrate (100) 5x5x1.0mm, 1SP SiC (4H 646 W/m·K for 273 KSpecifications: Single crystal: YSZ Size: 5 x 5 x 1. 0 mm + 0. 05 mm Orientation: (100) + 0. 5o Polish: one side polished, polished by CMP technology Surface roughness: < 5A RMS by AFM Typical Properties Chemical Formula Y2O3 stabilized ZrO2, 8 % mole Y2O3 Crystal Structure Cubic, Face Centered, CaF2 type Unit Cell a = 5. 125 A Density 5. 8 g cc Melting Point 2500 oC Thermal Expansion Coeff. 10. 3 ppm oC Dielectric Constant 27 Crystal Growth Technique