+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99."> Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles The milling machine must be – fit7alimentos.com.br

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Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles The milling machine must be

$100.62

Quantity
Description

The milling machine must be placed on solid flat ground to avoid damage

Warranty does not include tube (but only for machine MTI provided)

06 @ 0 oC   25

1mm Weight 2

A built-in travel rod of the coater with the digital micrometer head to adjust the gap between slot die and substrate Pic

Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles The milling machine must beSpecifications: Orientation: M <10 10> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.

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