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LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer 535 cycles
LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer 535 cycles
$194.35
Description
535 cycles
Optional Crimping Die Core for 3-Electrode 2032 Coin Cell is available at extra cost
It is designed to coat multi-composition material in one time with high throughput
Li2CO3 (%) 0
Surface Roughness: < 10A
LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer 535 cyclesLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.
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