GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) Click here to buy more
$629.62
Description
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Optionals Click here to choose flange for tube from 1" to 11" Vacuum Pump & High Vacuum Station
Conductor type: P-type
: 357 mm / 14 inch
A complete calibration system
GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) Click here to buy moreGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5
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