LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation it can grind samples under

it can grind samples under the vacuum condition or be filled with inert gas

Whole set  pressing die includes One 0

Conductor type:               S-C-P

Net Weight: 320mg/pcs

Conductivity type                                               P type

LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation it can grind samples underLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.