Si (100) 5x5x0.5mm, 1SP, P-type B-doped, R: 1-10 ohm-cm Si 4 a33: 7
$12.12
Description
4 a33: 7
it is suggested to use milling balls with a diameter of less than 10mm
01 Ohms/cm
For CVD application
PEN layer=0
Si (100) 5x5x0.5mm, 1SP, P-type B-doped, R: 1-10 ohm-cm Si 4 a33: 7Specifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5 x 5 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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