+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: Two sidesEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ Crystal Purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: Two sidesEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ Crystal Purity: >99."> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: Two sidesEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ Crystal Purity: >99."> Al2O3-Sapphire Wafer, M-plane, 1"Dia x 0.5 mm, 2SP - ALM25D05C2 Battery Cell Tester 1170°C ~ 1450°C (2138°F ~ – fit7alimentos.com.br

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Al2O3-Sapphire Wafer, M-plane, 1"Dia x 0.5 mm, 2SP - ALM25D05C2 Battery Cell Tester 1170°C ~ 1450°C (2138°F ~

$149.44

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Description

1170°C ~ 1450°C (2138°F ~ 2642°F) in H2

For more information on this Al-Clad coin cell case

Roughness of epi-layer is close to 1 mono-layer (ML)

saving the user's time and cost

Working temperature: 1750°C in air (short time)

Al2O3-Sapphire Wafer, M-plane, 1"Dia x 0.5 mm, 2SP - ALM25D05C2 Battery Cell Tester 1170°C ~ 1450°C (2138°F ~Specifications: Orientation: M <10 10> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: Two sidesEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ Crystal Purity: >99.

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