Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm Silicon Carbide Ceramic Surface Polishing: one side epi

Surface Polishing:           one side epi polished

EPD:                               N/A

BOW:                               <=20 um

Orientation: R-plane (11-02) +/- 0

Voltage:  208 - 240v AC    50/60Hz

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm Silicon Carbide Ceramic Surface Polishing: one side epiSingle crystal Si, Prime Grade Conductivity: P type ( B doped) Resistivity: 0. 01 0. 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 (+ 0. 025) mm Orientation: (100) + 0. 5 deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma