GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade In and other artworks

and other artworks

4 x106 /cm3

Power AC 110V and 208-240V (50/60Hz) switchable for worldwide operation

Resistivity: N/A

025 mm ( thickness)

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP, Mechanical Grade In and other artworksGaAs single crystal wafer,Mechanical Grade Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished NOT EPI Ready wafer Doping: undoped Conductor type: Semi Insulating Resistivity: N A Mobility: N A EPD: N A Primary Flat: EJ(0 1 1) Primary Flat Length: 17 + 1 mm Secondary Flat: EJ(0 11) Secondary Flat Length: 7 + 1 mm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces