Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm Saws Click to learn: What is

Click to learn: What is Cold Isostatic Pressing (CIP)

For the Data of BOROFLOAT® Borosilicate Float Glass

< 5 x10-5  at C axis

0 mA to 3000 mA

Wafer Size:                    4" dia x  500 microns

Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm Saws Click to learn: What isGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 400 microns Surface Polishing: Two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 035 0. 039 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: