Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Its values decline when the

Its values decline when the temperature is below 1000 oC

Components or devices are held on surface layer once they contact gel layer

Resistivity:                    >1

Surface of SrTiO3 substrate before Step treatment (AFM)

Polishing:                      one side polished

Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Its values decline when theSingle crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 3 0. 35 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw