Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm Sodium-ion Battery Supplies 2-3/8" OD Alumina tube (

2-3/8" OD Alumina tube ( 95% Al2O3 material)

The stacking procedures are shown below:

Inside Diameter

80L x 66W x 29H (mm)

General Properties  for Gold

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm Sodium-ion Battery Supplies 2-3/8" OD Alumina tube (Thermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Growth method Dry oxidizing at 1000oC Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N Type P doped Resistivity: 1 10 ohm. cm Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click