Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 Cd

Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm - SIPa101005S1R1 CdSpecifications: Single crystal: Si Conductive type: N type, P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater

If you like to run multiple battery analyzers on one Laptop

Single crystal:         Si

and rotary coating

185 ohm-cm

Coulombic efficiency

Polishing:     one side polished

Transmission Range:          0

Specifications of MgO Substrate Size: 10mm x 10mm x 0

Polishing:                     single side polished

Elongation: >2%

Warranty  One year limited with lifetime support

Application Notes Replacement springs and micrometer heads are available for future maintenance