GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses ID: 82 mm

ID:      82 mm

1600°C ( in air) continuous

BN Film coated by sputtering method

and the latest version testing software are installed and calibrated for immediate use (Up to 20 sets of analyzers can be simultaneously controlled by one PC)

Boosting the interfacial superionic conduction of halide solid electrolytes for all-solid-state batteries

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses ID: 82 mmGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: single side polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4470 6540 cm^2 V. S Resistivity: (0. 96 5. 34) x 10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces