InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp KTaO3 Height: 1/2"

Height: 1/2"

Note:  MTI does not manufacture this product

and 30mm) with this sealant and Aluminum lamination film for immediate use

Film thickness:   1-10 monolayer  thick

Sellenmeyer equation:                                         ηo2 -1 =3

InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp KTaO3 Height: 1/2"InP single crystal wafer Growing Method: VGF Orientation: (111)B Size: 2" diameter x 0. 35 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 26 1. 40)x10^ 3 ohm. cm Mobility: (1540 1650) cm^2 v. s EPD: N A Carrier Concentration: (2. 71 3. 24) x10^18 cm^3 Surface Roughness: <4 nm EPI ready surface and packing