Al2O3- Sapphire Wafer, R Plane, 3" dia x 0.5mm, 1SP, orientation with 45 degree counter-clockwise from the projection of C-axis onto the R-plane Accessories - Mo deposition by sputtering

- Mo deposition by sputtering

moisture removal

Surface Roughness: Ra <= 5 Angstrom

Loading Current: 10A

OVERALL TRAY SIZE

Al2O3- Sapphire Wafer, R Plane, 3" dia x 0.5mm, 1SP, orientation with 45 degree counter-clockwise from the projection of C-axis onto the R-plane Accessories - Mo deposition by sputteringFearures: R plane (1 102) orientation sapphire wafer is being used as a superconductor substrate due to less mis matched lattice and stable chemical and physical properties. Wafer size: 3" dia x 0. 5 mm thickness (1 102) R plane orientation + 0. 5 Deg, orientation with 45 degree counter clockwise from the projection of C axis onto the R plane Polished surface: Wafer surface is EPI polished via a special CMP procedure. One side polished Package: Each