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InAs (100), undoped 10x10x0.45mm, 2sp Ceramic & Glass Substrate A-Z Carrier Concentration (1-3
InAs (100), undoped 10x10x0.45mm, 2sp Ceramic & Glass Substrate A-Z Carrier Concentration (1-3
$159.85
Description
Carrier Concentration (1-3
4 Ni+Co+Mn (Wt%) 59
24 Segment PID automatic control
Typical Properties:
The best crimper: MSK-PN110-S Compact Gas Driven for consistent result Pic1
InAs (100), undoped 10x10x0.45mm, 2sp Ceramic & Glass Substrate A-Z Carrier Concentration (1-3InAs wafer: (Undoped, N type) Size: 10x10x0. 45mm Orientation: <100> + 0. 50 Polishing: two sides polished Growth Method: LEC Major Flat Orientation: <110> Minor Flat Orientation: < 110> Mobility: (20000 22000) cm^2 V. s Carrier Concentration: < 2. 1 E16 cm^ 3 EPD: <30000 cm^2 Packing: in 1000 class clean room with wafer container
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, undoped 10x10x0.45mm, 2sp Ceramic & Glass Substrate A-Z Carrier Concentration (1-3){kind=link}
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