GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 2SP - GAUa76D05C2US5 Coaters core die made of hardened

core die  made of  hardened steel and highly polished  with hardness HRC 60 - 62

Do not press flammable

7) x107 <5000

45 psi - 14

Faraday's measurement and etc

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 2SP - GAUa76D05C2US5 Coaters core die made of hardenedGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: both sides polished; Doping: undoped Conductor type: Semi Insulating Resistivity: ( 0. 6 4. 04)x10^8Ohm. cm Mobility: 4510 6380cm^2 V. S EPD: <5000cm^ 2 PrimPrimary Flat: EJ(0 1 1)+ 1 degree,22+ 1. 0mm Minor Flat: EJ(0 1 1)+ 1 degree, 11+ 1. 0mm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces