HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded This Guide is intended for

This Guide is intended for use in both establishing new Specifications within SEMI as well as verification of performance to SEMI Specifications

本スタンダードは，global Physical Interfaces & Carriers Committeeで技術的に承認されている。現版は2009年9月4日，global Audits and Reviews Subcommitteeにて発行が承認された。2009年10月にwww

1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II プロトコル用暫定仕様

orgで入手可能となる。初版は2000年6月発行。前版は2007年3月発行。

このスタンダードは以下を期待される：

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded This Guide is intended forThe sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is