M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 1 Ωcm for n-type silicon

1 Ωcm for n-type silicon with minor changes in the measurement procedure

eliminating inaccuracies due to incorrect or untimely input from the user

1  The purpose of this Standard is to standardize requirements for nitric acid used in the semiconductor industry and testing procedures to support those standards

There is close alignment between this Guide and common specifications used for the purchase of silicon wafers

Determining the root cause of TDDB results is beyond the scope of this Test Method

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 1 Ωcm for n-type silicon1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of