G08600 - SEMI G86 - Test Method for Measurement of Chip (Die) Strength by Mean of 3-Point Bending Revision:SEMI G86-0217 - Superseded

G08600 - SEMI G86 - Test Method for Measurement of Chip (Die) Strength by Mean of 3-Point Bending Revision:SEMI G86-0217 - SupersededThis Test Method defines a procedure for the evaluation of die strength by the mean of 3 point bending method. This Test Method applies only for 3 point bending method, and other methods will be defined by the separate documents. This Test Method is used to measure die strength for dies from processed wafers. Wafer thinning technology becomes popular to meet the demand for thin packages, so the die strength data is critical for the die quality and

and micro-bump are developed to ensure high-yield of the middle-end process

1  The purpose of this Standard is to standardize requirements for ammonium hydroxide used in the semiconductor industry and testing procedures to support those standards

This Test Method is also applicable to other types of packages

SEMI E99-1104E (editorial revision)

The GEM Standard defines which SECS-II messages should be used

EQIPs may be defined for a new equipment type not previously addressed in this Standard

in order to control particulate contamination from those gases

SEMI E169-0615 (technical revision)

It assumes the existence of terminology described in other SEMI Flat Panel Display Documents

the user must be specific in the selection of the tube and welded fitting s to be evaluated

11-0301 (first published)

orgで入手可能となる。初版は1999年発行。前版は2005年3月発行。