 test for inter-metal layers Ingestion-build-47182 ISO 7146-1 can be useful){kind=link}
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Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 ISO 7146-1 can be useful
Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 ISO 7146-1 can be useful
$166.00
Description
ISO 7146-1 can be useful as it:
while awaiting the adoption of verifiable European criteria
BS ISO 6196 Micrographics
including auditors
implementing and using metadata within the framework of BS ISO 15489
Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers Ingestion-build-47182 ISO 7146-1 can be useful1 Scope This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time dependent dielectric breakdown (TDDB) test for inter metal layers applied in semiconductor devices.
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